Semiconductor Diode MCQs
Q: The electrical resistance of the depletion layer is large because
- It has no change carriers
- It has a large number of charge carriers
- It contains electrons as charge carriers
- It has holes as charge carriers
Answers: (1) It has no change carriers
Q: If the forward voltage in a semiconductor diode is doubled, the width of the depletion layer will
- Become half
- Become one-fourth
- Remain unchanged
- Become double
Answer: (1) Become half
Q: The PN junction diode is used as
- An amplifier
- A rectifier
- An oscillator
- A modulator
Answer: (2) A rectifier
Q: When a PN junction diode is reverse biased
- Electrons and holes are attracted towards each other and move towards the depletion region
- Electrons and holes move away from the junction depletion region
- Height of the potential barrier decreases
- No change in the current takes place
Answer: (2) Electrons and holes move away from the junction depletion region
Q: A PN junction has a thickness of the order
- 1 cm
- 1 mm
- 10-6 m
- 10-12 cm
Answer: (3) 10-6 m
Q: In the depletion region of an unbiased PN junction diode there are
- Only electrons
- Only holes
- Both electrons and holes
- Only fixed ions
Answer: (4) Only fixed ions
Q: On increasing the reverse bias to a large value in a PN junction diode, current
- Increases slowly
- Remains fixed
- Suddenly increases
- Decreases slowly
Answer: (3) Suddenly increases
Q: In the forward bias arrangements of a PN junction diode
- The N end is connected to the positive terminal of the battery
- The P end is connected to the positive terminal of the battery
- The direction of the current is from N end to the P end in the diode
- The P end is connected to the negative terminal of the battery
Answer: (2) The P end is connected to the positive terminal of the battery
Q: In a PN junction diode
- The current in the reverse biased condition is generally very small
- The current in the reverse biased condition is generally very small but the forward-biased current is independent of the bias voltage
- The reverse-biased current is strongly dependent on the applied bias voltage
- The forward biased current is very small in comparison to reverse-biased current.
Answer: (1) The current in the reverse biased condition is generally very small
Q: The cut-in voltage for silicon diode is approximately
- 0.2 V
- 0.6 V
- 1.1 V
- 1.4 V
Answer: (2) 0.6 V